An5318a datasheet

An5318a datasheet

Title: CX301A Author: Cunningham Subject: FP-2002-04-07 Created Date: 4/7/2002 8:06:52 PM

AN5832FJM datasheet Disclaimer: The information presented on this site is for suggestion purposes only. We recommend that you review the datasheet to confirm the part functionality, pinout, and performance for your application. Downloads/Datasheets: Sie finden passende Datenblätter im Datenblattarchiv. Suchen sie dort nach dieser Type und deren Vergleichstypen. You'll find the matching datasheets in the datasheet archive. Search for this type and its substitutes there. If you`re wondering how to reduce manufacturing test overheads without compromising quality, your answer is here. You`lleven find an N9310A RF signal generator fits your budget for those mini R&D projects or when your need initiate a low-cost project for product enhancements and extensions. 2SK3561 1 2005-01-26 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)

SA5-271P-5972. Part Number: NT.LCEAA.004. Processor & Chipset. Processor Manufacturer 2N7000A Datasheet (PDF) 1.1. 2n7000a.pdf Size:61K _kec 2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES ·High density cell design for low RDS(ON). ·Voltage controolled small signal switch. ·Rugged and reliable. Keysight 53131A/132A/181A Counters Data Sheet Recommended replacement products: 53200 Series RF and universal frequency counter/timers (Data sheet

Data Sheet and Technical Specifications K e y s ig h t 2 - Port and 4 - Port PNA - L Network Analyzer N5239A 300 kHz to 8.5 GHz N5231A 300 kHz to 13.5 GHz Rev. A/AH 2N7000A N-Channel Enhancement Mode Field Effect Transistor www.taitroncomponents.com Page 2 of 8 Equivalent Circuit This transistor is electrostatic sensitive device.

SA5-271P-5972. Part Number: NT.LCEAA.004. Processor & Chipset. Processor Manufacturer Data Sheet and Technical Specifications K e y s ig h t 2 - Port and 4 - Port PNA - L Network Analyzer N5239A 300 kHz to 8.5 GHz N5231A 300 kHz to 13.5 GHz They also offer low leakage over temperature (input off-leakage current less than 1nA at +85°C) and fast switching speeds (transition time less than 250ns). The MAX396 is a 16-channel device, and the MAX397 is a dual, 8-channel device. 2SK3561 1 2005-01-26 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)

Title: QUADRUPLE 2-INPUT POSITIVE-NAND BUFFERS Author: Texas Instruments, Inc. Subject: Data Sheet Keywords: NAND, sdls103 Created Date: 12/5/1998 4:01:23 AM YC500 & YC1000 Datasheet. Part No ECU-3 for YC500I or ECU-3Z for YC1000 (pictured) The ECU provides the Power Line Communication The content and copyrights of the attached material are the property of its owner. Distributed by: www.Jameco.com 1-800-831-4242. Jameco Part Number 17209 The NE/SA612A is designed for optimum low power performance. When used with the NE614A as a 45MHz cordless phone/cellular radio 2nd IF and demodulator , the NE/SA612A is capable of receiving -119dBm signals with a 12dB S/N ratio. Third-order intercept is typically -15dBm (that’s approximately +5dBm output intercept because of the RF gain).

The NE/SA612A is designed for optimum low power performance. When used with the NE614A as a 45MHz cordless phone/cellular radio 2nd IF and demodulator , the NE/SA612A is capable of receiving -119dBm signals with a 12dB S/N ratio. Third-order intercept is typically -15dBm (that’s approximately +5dBm output intercept because of the RF gain). Title: QUADRUPLE 2-INPUT POSITIVE-NAND BUFFERS Author: Texas Instruments, Inc. Subject: Data Sheet Keywords: NAND, sdls103 Created Date: 12/5/1998 4:01:23 AM

Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date.

Top 500 semiconductor datasheet on www.ecadata.de at the 04 July 2017. aa - 99: 7992: 2008-10-08: 2017-07-04: Amo - 96: 867: 2012-06-05: 2017-07-04: amd - 90 INA118U datasheet, INA118U datasheets, INA118U pdf, INA118U circuit : TI1 - Precision, Low Power INSTRUMENTATION AMPLIFIER ,alldatasheet, datasheet, Datasheet search ... xitr datasheet, cross reference, circuit and application notes in pdf format. The Datasheet Archive. Search. Recent ... AN5318A Vl61UE r-15- ControAPL10-90* 12V120 ...

March, 2006. Sanken Electric Co.,Ltd. D01-009EA-060310 General Description FMEN-210A is a High Voltage (100V) Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Package---TO220F Applications • DC-DC converters • AC adapter • High frequency rectification circuit Features Low Voltage Temperature Sensors TMP35/TMP36/TMP37 Rev. F Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use.

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SA5-271P-5972. Part Number: NT.LCEAA.004. Processor & Chipset. Processor Manufacturer Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. > Network Analyzers > PNA Network Analyzers, 900 Hz to 120 GHz > N5232A PNA-L Microwave Network Analyzer, 20 GHz [Discontinued] N5232A PNA-L Microwave Network Analyzer, 20 GHz Discontinued | March, 2006. Sanken Electric Co.,Ltd. D01-009EA-060310 General Description FMEN-210A is a High Voltage (100V) Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Package---TO220F Applications • DC-DC converters • AC adapter • High frequency rectification circuit Features