Irf9620pbf datasheet 2n3904

Irf9620pbf datasheet 2n3904

2N3904 Datasheet, 2N3904 PDF, 2N3904 Data sheet, 2N3904 manual, 2N3904 pdf, 2N3904, datenblatt, Electronics 2N3904, alldatasheet, free, datasheet, Datasheets, data ... Compare pricing for Vishay IRF9620PBF across 28 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart. Rev. C/CZ MMBT3904 SMD General Purpose Transistor (NPN) www.taitroncomponents.com Page 3 of 9 Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time Order today, ships today. IRF540NPBF – N-Channel 100V 33A (Tc) 130W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

So far, I've tried C1815, and 2N3904 (PDF datasheets linked). 2N3904 works as expected. However, with the C1815, the Collector -> Emitter connection is always open, regardless of how the Base is connected (or not). I've tried multiple samples from the bag of C1815; same behavior: the LED is always on. 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1 2N3904 General Purpose Transistors NPN TO-92 Page 1 12/05/08 V1.1 High Speed Switching Features: • NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.

2n3904s revision no : 4 c 0 collector current i (ma) collector current i (ma) 0 c 0 base-emitter voltage v (v)be i - vc be 10 dc current gain h fe 0.1 0.3 1 3 collector current i (ma)c 0 collector-emitter voltage v (v)ce i - vc ce h - i collector current i (ma)c collector-emitter saturation ce(sat) v - i 2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4 All the part names for which the file 8850.pdf is a datasheet

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2N3904 Datasheet, 2N3904 PDF, 2N3904 Data sheet, 2N3904 manual, 2N3904 pdf, 2N3904, datenblatt, Electronics 2N3904, alldatasheet, free, datasheet, Datasheets, data ... Rev. C/CZ MMBT3904 SMD General Purpose Transistor (NPN) www.taitroncomponents.com Page 3 of 9 Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time

8 www.irf.com Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 IRF530 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF530 MOSFET. Order today, ships today. IRF540NPBF – N-Channel 100V 33A (Tc) 130W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics. 2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4

PN2222A *MMBT2222A **PZT2222A PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 1,000 8.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W PN2222A MMBT2222A PZT2222A EBC TO-92 SOT-23 SOT-223 Mark:1P C B E E B C C 2n3904s revision no : 4 c 0 collector current i (ma) collector current i (ma) 0 c 0 base-emitter voltage v (v)be i - vc be 10 dc current gain h fe 0.1 0.3 1 3 collector current i (ma)c 0 collector-emitter voltage v (v)ce i - vc ce h - i collector current i (ma)c collector-emitter saturation ce(sat) v - i 2N3904 Datasheet (PDF) 1.1. 2n3904g.pdf Size:398K _upd SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. 8 www.irf.com Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903

PN2222A *MMBT2222A **PZT2222A PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 1,000 8.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W PN2222A MMBT2222A PZT2222A EBC TO-92 SOT-23 SOT-223 Mark:1P C B E E B C C

4 www.irf.com Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 8. Maximum Safe Operating Area Fig 9. Maximum Drain Current vs.

A small signal NPN Transistor in a TO92 package, suitable for a range of applications. It can handle continuous DC currents of up to 200mA.

2N Series of general purpose transistors for switching and amplifier applications. Includes the 2N2222, 2N3904 and 2N3906, plus many more. Quantity discounts are available for 25 or more parts, click on the price link for more information. 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1 Micro Commercial Components 2N3904 datasheet.. If it's not shown correctly, Click here to open the file on a separate window Find where to buy AUK Corp catalog First Page, datasheet, datasheet search, data sheet, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, semiconductors 2n3904s revision no : 4 c 0 collector current i (ma) collector current i (ma) 0 c 0 base-emitter voltage v (v)be i - vc be 10 dc current gain h fe 0.1 0.3 1 3 collector current i (ma)c 0 collector-emitter voltage v (v)ce i - vc ce h - i collector current i (ma)c collector-emitter saturation ce(sat) v - i

2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1 Mind the current maximums -- the JC501 maxes at 100mA vs the 2N3904's 200mA Ic -- and its lower fT -- 130 vs 270 (though, switching a fan on and off, that shouldn't be an issue) and you should be good. e: That's for 2N3904. 2N3906 is a PNP: you won't use an NPN in that slot. 2N7000 is an N-channel MOSFET, that's trickier. NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted *