P12n60c3 datasheet

P12n60c3 datasheet

P12N60C3 Datasheet, P12N60C3 PDF, P12N60C3 Data sheet, P12N60C3 manual, P12N60C3 pdf, P12N60C3, datenblatt, Electronics P12N60C3, alldatasheet, free, datasheet ... p12n60c3. Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123 Text: bipolar transistor . The much lower on-state voltage drop varies only moderately between 25°C and 150 , Vce = BVces Tc = 150°C - - 1.0 mA Collector to Emitter Saturation Voltage vce(sat) 'c = > C110 . Rev. 3.2 Page 1 2009-11-27 SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor V DS @ Tjmax 650 V RDS(on) 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology

HGTP12N60C3, HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower The HEXFRED HFA15TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. Bulletin PD-2.334 rev. A/µs nC A LS Series Inductance 8.0 nH See Fig. 3 See Fig. 2 See Fig. 3--UJ+48 datasheet, cross reference, circuit and application notes in pdf format. 3--UJ+48 datasheet & applicatoin notes - Datasheet Archive The Datasheet Archive

633 1 & 63, 1 & 63$ 1 & &rro 026 3rzhu 7udqvlvwru v ds # tjmax 9 5'6 rq Ω)hdwxuh • 1hz uhyroxwlrqdu\ kljk yrowdjh whfkqrorj\ • :ruogzlgh ehvw 5'6 rq lq 72 Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... MAX743. Abstract: No abstract text available Text: y i/iy jx iw i 100[xH Toroid In d u c to r _ General Description The MAXL001 is a 100jiH inductor designed as the main magnetic com ponent for simple flyback DC-DC convert ers with up to 3W output. www.stcmcu.com

An errata sheet, describing minor operational differences from the data sheet and recommended workarounds, may exist for curren t devices. As device/documentation issues become known to us, we will publish an errata sheet. The errata will specify the revisi on of silicon and revision of document to which it applies. An errata sheet, describing minor operational differences from the data sheet and recommended workarounds, may exist for curren t devices. As device/documentation issues become known to us, we will publish an errata sheet. The errata will specify the revisi on of silicon and revision of document to which it applies. IHW30N160R2 Datasheet (PDF) 1.1. ihw30n160r2 rev2 1g.pdf Size:391K _infineon. IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : G E - very tight parameter distribution ...

APT44GA60B Datasheet (PDF) 1.1. apt44ga60bd30.pdf Size:237K _igbt_a APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT APT44GA60SD30 POWER MOS 8® is a high speed Punch-Through switch-mode IGBT APT44GA60B Datasheet (PDF) 1.1. apt44ga60bd30.pdf Size:237K _igbt_a APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT APT44GA60SD30 POWER MOS 8® is a high speed Punch-Through switch-mode IGBT P12N60C3 Datasheet (PDF) 1.1. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi. HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. HGTP12N60C3, HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor V DS @ Tjmax 650 V RDS(on) 0.28 Ω ID 15 A Feature New revolutionary high voltage technology • Ultra low gate charge Periodic avalanche rated • Extreme dv/dt rated Ultra low effective capacitances Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 ... p12n60c3. Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123 Text: bipolar transistor . The much lower on-state voltage drop varies only moderately between 25°C and 150 , Vce = BVces Tc = 150°C - - 1.0 mA Collector to Emitter Saturation Voltage vce(sat) 'c = > C110 . Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R502-170.K ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 12 A Drain Current Continuous ID 12 A Pulsed (Note 2) IDM 48 A Avalanche Energy Oct 19, 2015 · 11N60C3 Datasheet PDF - Cool MOS Power Transistor, 11N60C3 datasheet, 11N60C3 pdf, 11N60C3 pinout, substitute, equivalent, data, circuit, output, parts. 12N60C datasheet, 12N60C pdf, 12N60C data sheet, datasheet, data sheet, pdf

p12n60c3. Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123 Text: bipolar transistor . The much lower on-state voltage drop varies only moderately between 25°C and 150 , Vce = BVces Tc = 150°C - - 1.0 mA Collector to Emitter Saturation Voltage vce(sat) 'c = > C110 . Sprinter P12V600 data sheet Drawing: Terminal: Specifications: Part numbers not valid for North America, use type for ordering! Exide type designation Part number Nom. Voltage V Nominal capacity C 20 1.75Vpc 20°C Ah Nominal capacity C 10 1.80Vpc 25°C Ah Power 15min 1.60 Vpc 25°C W Length l max. mm Width b/w max. mm Height h1 max. mm Weight ... MAX743. Abstract: No abstract text available Text: y i/iy jx iw i 100[xH Toroid In d u c to r _ General Description The MAXL001 is a 100jiH inductor designed as the main magnetic com ponent for simple flyback DC-DC convert ers with up to 3W output. SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor V DS @ Tjmax 650 V RDS(on) 0.28 Ω ID 15 A Feature New revolutionary high voltage technology • Ultra low gate charge Periodic avalanche rated • Extreme dv/dt rated Ultra low effective capacitances Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 ... 3--UJ+48 datasheet, cross reference, circuit and application notes in pdf format. 3--UJ+48 datasheet & applicatoin notes - Datasheet Archive The Datasheet Archive

Sprinter P12V600 data sheet Drawing: Terminal: Specifications: Part numbers not valid for North America, use type for ordering! Exide type designation Part number Nom. Voltage V Nominal capacity C 20 1.75Vpc 20°C Ah Nominal capacity C 10 1.80Vpc 25°C Ah Power 15min 1.60 Vpc 25°C W Length l max. mm Width b/w max. mm Height h1 max. mm Weight ... 12N60C Datasheet, 12N60C PDF, 12N60C Data sheet, 12N60C manual, 12N60C pdf, 12N60C, datenblatt, Electronics 12N60C, alldatasheet, free, datasheet, Datasheets, data ...

MAX743. Abstract: No abstract text available Text: y i/iy jx iw i 100[xH Toroid In d u c to r _ General Description The MAXL001 is a 100jiH inductor designed as the main magnetic com ponent for simple flyback DC-DC convert ers with up to 3W output. May 19, 2016 · 15N60C3 Datasheet - 650V, MOS Power Transistor - Infineon, SPP15N60C3 datasheet, 15N60C3 pdf, 15N60C3 pinout, 15N60C3 manual, 15N60C3 schematic. SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor V DS @ Tjmax 650 V RDS(on) 0.28 Ω ID 15 A Feature New revolutionary high voltage technology • Ultra low gate charge Periodic avalanche rated • Extreme dv/dt rated Ultra low effective capacitances Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 ...

P12N60C3 Datasheet, P12N60C3 PDF, P12N60C3 Data sheet, P12N60C3 manual, P12N60C3 pdf, P12N60C3, datenblatt, Electronics P12N60C3, alldatasheet, free, datasheet ... May 19, 2016 · 15N60C3 Datasheet - 650V, MOS Power Transistor - Infineon, SPP15N60C3 datasheet, 15N60C3 pdf, 15N60C3 pinout, 15N60C3 manual, 15N60C3 schematic.

HGTP12N60C3 TO-220AB P12N60C3 HGT1S12N60C3 TO-262AA S12N60C3 HGT1S12N60C3S TO-263AB S12N60C3 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A. C E G Packaging JEDEC TO-220AB JEDEC TO-262AA JEDEC TO-263AB SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor V DS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology ...