2sj28 datasheet

2sj28 datasheet

VFET Sony's Rare 2SK82 and 2SJ28 (KE-33) VFET (1 Pair) Auction in the Tubes & Acoustics,Components & Supplies,Electrical & Test … REQUEST TO REMOVE iOffer Want Ad: Looking for GM #15204335 NAV LCD Service Part Sep 10, 2015 · 2SJ28 is a very special P Channel Vertical Field Transistor (VFET) used in Sony Class First Class-D Amplifier (Model: TA-N88(B). 2SJ28 Datasheet PDF Download Other data sheets within the file : 2SJ28 Hi-Fi Blog... Page 2 See the MAIN PAGE for the Jan-July 2017 Blog plus INDEX. August 2017 Blog.↑ Misleading Amplifier Power vs Frequency Range Tests. As the 1970s ... 2SJ50 Transistor Datasheet, 2SJ50 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

2SJ278 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS ±20 V Drain current ID –1 A Drain peak current ID (pulse) Note 1 –4 A Body to drain diode reverse drain current IDR –1 A Channel dissipation Pch Note 2 1 W Offer 2SJ284-TA SANYO from Kynix Semiconductor Hong Kong Limited.IC Chips 半导小芯专注于国外和国产芯片资料查询,都在用的芯片查询工具,为您提供规格书查询,数据手册查询,datasheet查询,IC查询,替代型号查询等相关信息,帮您快速找到数据手册,规格书,datasheet等芯片PDF资料,查询更全芯片资料就到半导小芯官网! 2SJ74 datasheet, 2SJ74 pdf, 2SJ74 data sheet, datasheet, data sheet, pdf

Title: 6SJ7 12SJ7 Author: General Electric Subject: JA-FP-2000-12-26 Created Date: 12/26/2000 8:36:05 PM 2ch.net元スレピュアAU板に戻る全部最新50 終了したスレッドです ...

2SJ221 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage V DSS –100 V Gate to source voltage V GSS ±20 V Drain current I D –20 A Drain peak current I D (pulse) Note 1 –80 A Body to drain diode reverse drain current I DR –20 A Channel dissipation Pch Note 2 75 W Printed in JapanMOS FIELD EFFECT TRANSISTORThe 2SJ358 is a P-channel vertical MOS FET that canbe used as a switching element. The 2SJ358 can bedirectly driven by an IC operating at 5 V.The 2SJ358 features a low on-resistance and excellentswitching characteristics, and is suitable for applicationssuch as actuator driver and DC/DC converter.FEATURES• datasheet search, datasheets, Datasheet ...

All the part names for which the file mXuxyvt.pdf is a datasheet 2SK170 1 2003-03-25 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. 2SJ74 Datasheet (PDF) 1.1. 2sj74.pdf Size:332K _toshiba 2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and M.C. head amplifiers and 2SJ28 and a small Jensen coupling transformer. (This did not count the power supplies). It delivered 20 watts at reasonably good gain and low distortion and did so without feedback. I am told that it sounded very good, and it is the subject of a separate upcoming article.

RE: Amplis Aleph simu tests - jeanpaulp - 29/07/2015 21:50:45 Effectivement il se trouve le First Watt 5 ayant un schéma faisant penser aux schémas de J-M Plantefève sans condensateurs de liaison dans la boucle de contre réaction, avec limitation de courant des Mos Fet finaux à tester. 2SK170 1 2003-03-25 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers.

All the part names for which the file mXuxyvt.pdf is a datasheet Printed in JapanMOS FIELD EFFECT TRANSISTORThe 2SJ358 is a P-channel vertical MOS FET that canbe used as a switching element. The 2SJ358 can bedirectly driven by an IC operating at 5 V.The 2SJ358 features a low on-resistance and excellentswitching characteristics, and is suitable for applicationssuch as actuator driver and DC/DC converter.FEATURES• datasheet search, datasheets, Datasheet ... Cascadable Amplifier 10 to 1500 MHz Rev. V3 A28 / SMA28 1 o M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. V-FET and SIT The static induction transistor (SIT) is a three-terminal semiconductor device. Similarly to other active devices (like the bipolar-junction transistor (BJT) or the junction field-effect transistor (JFET), in a SIT the current flow between two terminals (the source and the drain) can be controlled through the third terminal (the gate). Pontos idő: 2019.12.29. 02:55: Fórum kezdőlap » DIY - Csináld magad AUDIO » Erősítők » Félvezetős. Időzóna: UTC + 1 óra [ nyi]

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

Some Part number from the same manufacture Hitachi Semiconductor (acquired by Renesas) 2SJ505L Low Frequency Power Amplifier: 2SJ530L Silicon P-channel MOSFET High Speed Power Switching Adta magát a projekthez a más területen már felhasznált nagy teljesítményű V-FET ( Sony 2SK82/2SJ28 ) - gondoltam csak húz valamit ezen az egyszerű eszközön. A deszkamodellen sikerült elsőre kikísérletezni egy jól teljesítő verziót, a THD 1 kHz/50W-nál 0.05% lett, de egy wattnál sem több 0,03%-nál....ebben benne van a ... Bonjour, Merci pour ces infos, est-ce qu'à Melaudia, vous avez essayé des amplis à base de SIT ? Est ce que vous avez fait des test en bi-amp avec des amplis simples (genre SPUD) dans les medium / aigus ? Cliccando su un oggetto o su un altro link sul sito web o Accetta, accetti di usare i cookie e altre tecnologie per l'elaborazione dei tuoi dati personali allo scopo di migliorare e personalizzare la tua esperienza sui marchi di eBay, compreso Kijiji o pubblicità di terzi personalizzate per te, sul sito e fuori dal sito.

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Cascadable Amplifier 10 to 1500 MHz Rev. V3 A28 / SMA28 1 o M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Tokin and Japanese V-FET - SIT.pdf - Free download as PDF File (.pdf), Text File (.txt) or view presentation slides online.

2ch.net元スレピュアAU板に戻る全部最新50 終了したスレッドです ... 4 0006M–PEEPR–12/09 AT28C256 4.5 Toggle Bit In addition to DATA Polling the AT28C256 provides another method for determining the end of a write cycle. 2SJ221 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage V DSS –100 V Gate to source voltage V GSS ±20 V Drain current I D –20 A Drain peak current I D (pulse) Note 1 –80 A Body to drain diode reverse drain current I DR –20 A Channel dissipation Pch Note 2 75 W 2SJ221 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage V DSS –100 V Gate to source voltage V GSS ±20 V Drain current I D –20 A Drain peak current I D (pulse) Note 1 –80 A Body to drain diode reverse drain current I DR –20 A Channel dissipation Pch Note 2 75 W