Pkc2132pi datasheet 2n3904

Pkc2132pi datasheet 2n3904

2N3904 MMBT390 4 MMPQ390 4 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplif ier and switch. The useful dynamic range extends to 100 mA as a swi tch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted 2n3904 mmbt3904 pzt3904.pdf Size:111K _fairchild_semi. 2N3904 MMBT3904 PZT3904 C C E E C C TO-92 B B SOT-23 B E SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 2N3904 e23 datasheet, cross reference, circuit and application notes in pdf format. BC547 datasheet, BC547 pdf, BC547 data sheet, datasheet, data sheet, pdf 2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C

2n3904 mmbt3904 pzt3904.pdf Size:111K _fairchild_semi. 2N3904 MMBT3904 PZT3904 C C E E C C TO-92 B B SOT-23 B E SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 2N3904 e23 datasheet, cross reference, circuit and application notes in pdf format.

©Semiconductor Components Industries, LLC, 2007 April, 2007 -- Rev. 3 1 Publication Order Number: MPSA28/D MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon

Same catergory: 06F9946: Diode Schottky 7.5a 45v.Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring. 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 100 400 — Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz hoe 140mS Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz NF — 5 dB Delay Time (see Fig. 1) 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack TO-92 Bulk TO-92 Ammopack 1/5 ECIAauthorized.com A Trusted Source for Authorized Distributors. ECIAauthorized.com was created by ECIA and its members to give users aggregated price and availability data for genuine parts from reliable sources.

2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1 NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. 2N3705 Bipolar Transistors Page 3 09/05/08 V1.1 Specifications VCEO (V) VCBO Maximum (V) IC (mA) hFE Minimum at IC = 50mA fT Minimum (MHz) Ptot (mW) Pakage Part Number 30 50 0.8 50 100 625 TO-92 2N3705

2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C LM31 datasheet, LM31 pdf, LM31 data sheet, datasheet, data sheet, pdf The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low current and power, medium voltage, and can operate at moderately high speeds. BC547 datasheet, BC547 pdf, BC547 data sheet, datasheet, data sheet, pdf

2SC1030 Datasheet (PDF) 1.1. 2sc1030.pdf Size:44K _jmnic. Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 ... 2N3904 e23 datasheet, cross reference, circuit and application notes in pdf format. 2N3904 Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 600mW, Vceo : 40V, ic : Features. Through Hole Package Capable 600mWatts of Power Dissipation. Symbol Parameter Collector-Emitter Breakdown Voltage* C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc,

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2N3904 MMBT390 4 MMPQ390 4 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplif ier and switch. The useful dynamic range extends to 100 mA as a swi tch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted 2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

BC547 datasheet, BC547 pdf, BC547 data sheet, datasheet, data sheet, pdf 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 100 400 — Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz hoe 140mS Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz NF — 5 dB Delay Time (see Fig. 1) 2N3904 e23 datasheet, cross reference, circuit and application notes in pdf format. The 2n3904 also can have quite a bit variation on this, mostly depend on the batch/brand. Most small signal transistors have a hfE between 50 and 100, while larger transistors rather have a hfE of 20. It depends if you want to use the transistor as amplifier, or if you want to saturate it with a high base current. Download ST Microelectronics, Inc. 2N3904-AP pdf datasheet file. If it's not shown correctly, Click here to open the file on a separate window