Mos 6550 datasheet

Mos 6550 datasheet

251257-02A: ROM: SFD1001: Controller EPROM (FDC) 24: 251474-01B: FDC: 8250/8050 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable 6V6GT TUNG-SOL. Totally Tweed! The preferred OEM tube of '50s-era Fender Tweed Champ and Deluxe amplifiers The Tungsol 6V6 has a geometry designed to safely handle the higher voltages used in guitar amps – plus heavier plate and grid materials. Product Code Rev Product Name Rev Short Name Full Name Remarks Image MOS KIM-1: KIM: Keyboard Input Monitor: Single-board computer for the 6502

Title: 6550 Author: RCA Subject: FP-2011-12-03 Created Date: 12/3/2011 11:20:48 AM ©2002 Fairchild Semiconductor Corporation IRF510 Rev. B IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

q division of Commodore Business Machines, Inc. 950 Rjrrenhouse Rood. Nomsrown PA 19403 • 215/666-7950 • TWX 510-660-4160 NMOS 6500 MICROPROCESSORS THE 6500 MICROPROCESSOR FAMILY CONCEPT — The 6500 Series Microprocessors represent the first totally software compatible microprocessor family. q division of Commodore Business Machines, Inc. 950 Rjrrenhouse Rood. Nomsrown PA 19403 • 215/666-7950 • TWX 510-660-4160 NMOS 6500 MICROPROCESSORS THE 6500 MICROPROCESSOR FAMILY CONCEPT — The 6500 Series Microprocessors represent the first totally software compatible microprocessor family. N-Channel 500 V 30 A MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for N-Channel 500 V 30 A MOSFET. Title: 6550A Author: General Electric Subject: JA-FP-2001-12-02 Created Date: 12/2/2001 4:32:10 PM

he SED SV6550C is a glass envelope beam power pentode. It is intended for ultra linear audio frequency power amplification service. Close manufacturing specification tolerances and improved processing provide improved reliability and superior sonic performance. The new SED SV6550C features: increased peak cathode DN2540 Depletion Mode MOSFET - N-channel BVDSX / BVDGX 400V * Same as SOT-89. RDS(ON) (max) 25 IDSS (min) 150mA Order Number / Package TO-243AA* DN2540N8. Product shipped on 2000 piece carrier tape reels.. * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) te rminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the

Catalog Datasheet MFG & Type PDF Document Tags; SUV85N10-10. Abstract: mos 6550 Text: SPICE Device Model SUV85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175°C MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge ...

he SED SV6550C is a glass envelope beam power pentode. It is intended for ultra linear audio frequency power amplification service. Close manufacturing specification tolerances and improved processing provide improved reliability and superior sonic performance. The new SED SV6550C features: increased peak cathode

Catalog Datasheet MFG & Type PDF Document Tags; SUV85N10-10. Abstract: mos 6550 Text: SPICE Device Model SUV85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175°C MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge ... Product Code Rev Product Name Rev Short Name Full Name Remarks Image MOS KIM-1: KIM: Keyboard Input Monitor: Single-board computer for the 6502 voltage on the low side of the fan with an external MOS-FET or bipolar transistor. The MAX6650/MAX6651 each contain two internal con-trol loops. The first loop controls the voltage across the fan. The internal digital-to-analog converter (DAC) sets the reference voltage for an internal amplifier (Figure 1), MOS 6520 datasheet, cross reference, circuit and application notes in pdf format. The Datasheet Archive. Search. Recent Listings Manufacturer Directory Get instant ...

voltage on the low side of the fan with an external MOS-FET or bipolar transistor. The MAX6650/MAX6651 each contain two internal con-trol loops. The first loop controls the voltage across the fan. The internal digital-to-analog converter (DAC) sets the reference voltage for an internal amplifier (Figure 1), 6550 / 6550A PENTODE (US BRANDS ONLY) (click on links below to check stock) 6550A GE welded plates 1970's 6550A GE stapled plates 1970's - 1992 JAN-6550A GE stapled plates 1970's - 1980's 6550 Sylvania 1970's - 1982 6550 Tungsol gray plate with holes 1963 - 1970's 6550 Tungsol gray smooth plate 1960 - 1963 6550 Tungsol black plate 1950's - 1960

2SK3918 Datasheet (PDF) 1.1. 2sk3918.pdf Size:160K _nec DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 ... 2SK1573-E Silicon N Channel MOS FET . Application. Features. Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter. voltage on the low side of the fan with an external MOS-FET or bipolar transistor. The MAX6650/MAX6651 each contain two internal con-trol loops. The first loop controls the voltage across the fan. The internal digital-to-analog converter (DAC) sets the reference voltage for an internal amplifier (Figure 1),

IRHNA57064 JANSR2N7468U2 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J 60V, N-CHANNEL REF: MIL-PRF-19500/673 R5 TECHNOLOGY Product Summary IRHNA57064 is part of the International Rectifier HiRel family of products. IR HiRel R5 technology provides high

2SK3918 Datasheet (PDF) 1.1. 2sk3918.pdf Size:160K _nec DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 ... P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable MOS TECHNOLOOV, INC. VALLEY FORGE CORPORATE CENTER (215) 666-7950 950 RITTENHOUSE ROAD, NORRISTOWN, PA. 19401 MCS6500 MICROPROCESSO RS The MCS6500 Microprocessor Family Concept - PRELIMINARY DATA SHEET MAY, 1976 The MCS6500 Series Microprocessors represent the first totally software compatible microprocessor family.

AFN2310AS 60V N-Channel Alfa-MOS Technology Enhancement Mode MOSFET ©Alfa-MOS Technology Corp. www.alfa-mos.com Rev.A Apr. 2014 Page 1 General Description Features AFN2310AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent R DS(ON), low gate charge. IRHNA57064 JANSR2N7468U2 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J 60V, N-CHANNEL REF: MIL-PRF-19500/673 R5 TECHNOLOGY Product Summary IRHNA57064 is part of the International Rectifier HiRel family of products. IR HiRel R5 technology provides high