53a50 datasheets

53a50 datasheets

74A50 datasheet, 74A50 pdf, 74A50 data sheet, datasheet, data sheet, pdf Title: 50C5 Author: RCA Subject: FP-2012-01-14 Created Date: 1/14/2012 2:24:32 PM Data sheet erratum PCN 2009-134-A. New package outlines TO-247. Final Data Sheet Erratum Rev. 2.4, 2014-04-29. 1. New package outlines TO-247. Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package 18N50 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-477.S TYPICAL CHARACTERISTICS D r a i n C u r r e n t, I D (A) Drain-Source Voltage, V DS (V) Gate Charge Characteristics Datasheet 2 W Conductive Plastic Potentiometers 380 Series, RV4 Series, 485 Series, 53C Series, 385 Series. 2 Sensing and Productivity Solutions

50N322 datasheet, 50N322 pdf, 50N322 data sheet, datasheet, data sheet, pdf Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2045CT series is supplied in the SOT78 conventional leaded package.

IXFB100N50P MOSFET N-CH 500V 100A PLUS264 IXYS datasheet pdf data sheet FREE from datasheetz.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. 53A1S Datasheet, 53A1S PDF, 53A1S Data sheet, 53A1S manual, 53A1S pdf, 53A1S, datenblatt, Electronics 53A1S, alldatasheet, free, datasheet, Datasheets, data sheet ...

Title: GU50 Author: Electronintorg Subject: JA-2003-01-18 Created Date: 12/13/2002 5:28:06 PM International Rectifier's HFA50PA60C is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. International Rectifier's HFA50PA60C is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. FS2KM-18A OUTLINE DRAWING Dimensions in mm TO-220FN MITSUBISHI Nch POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per-sonal computer etc. Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation

53A1S Datasheet, 53A1S PDF, 53A1S Data sheet, 53A1S manual, 53A1S pdf, 53A1S, datenblatt, Electronics 53A1S, alldatasheet, free, datasheet, Datasheets, data sheet ... TO252-4L datasheet, cross reference, circuit and application notes in pdf format.

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage 2N5088 2N5089 VCEO 30 25 Vdc Collector − Base Voltage 2N5088 2N5089 VCBO 35 30 Vdc Emitter − Base Voltage VEBO 3.0 Vdc Collector Current − Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C International Rectifier's HFA50PA60C is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw QW-R502-895.C ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous ID 20 A Drain Current (Note 2) Pulsed IDM 80 A Avalanche Current IAR 20 A

63a52 datasheet, cross reference, circuit and application notes in pdf format. ... 53A50 58A3 Victory Engineering Thermistor 63A43 480A10 43A73 32A50 53A46 22A53 Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2045CT series is supplied in the SOT78 conventional leaded package. 18N50 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-477.S TYPICAL CHARACTERISTICS D r a i n C u r r e n t, I D (A) Drain-Source Voltage, V DS (V) Gate Charge Characteristics 23N50 datasheet, 23N50 pdf, 23N50 data sheet, datasheet, data sheet, pdf 4 www.irf.com Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C, C a p a c i t a n

74A50 datasheet, 74A50 pdf, 74A50 data sheet, datasheet, data sheet, pdf ZTX651 Datasheet (PDF) 1.1. ztx650 ztx651.pdf Size:67K _diodes. NPN SILICON PLANAR ZTX650 MEDIUM POWER TRANSISTORS ZTX651 ISSUE 2 JULY 94 T V I V i i I V V E-Line V V TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

SiHG20N50C www.vishay.com Vishay Siliconix S17-1726-Rev. D, 20-Nov-17 1 Document Number: 91382 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

50N322 datasheet, 50N322 pdf, 50N322 data sheet, datasheet, data sheet, pdf

IXFB100N50P MOSFET N-CH 500V 100A PLUS264 IXYS datasheet pdf data sheet FREE from datasheetz.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. FQP50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the 18N50 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-477.S TYPICAL CHARACTERISTICS D r a i n C u r r e n t, I D (A) Drain-Source Voltage, V DS (V) Gate Charge Characteristics IR3502 datasheet, cross reference, circuit and application notes in pdf format. The Datasheet Archive. Search. Recent Listings Manufacturer Directory Get instant ...

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage 2N5088 2N5089 VCEO 30 25 Vdc Collector − Base Voltage 2N5088 2N5089 VCBO 35 30 Vdc Emitter − Base Voltage VEBO 3.0 Vdc Collector Current − Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. 53A1S Datasheet, 53A1S PDF, 53A1S Data sheet, 53A1S manual, 53A1S pdf, 53A1S, datenblatt, Electronics 53A1S, alldatasheet, free, datasheet, Datasheets, data sheet ...