Fqb19n20l datasheet

Fqb19n20l datasheet

www.vishay.com Fuji Electric offers an extensive lineup of Power Supply Control IC. This page covers the products suitable for AC/DC current and presents their data sheets. http://www.elm-tech.com Rev.4.0 3.3V Uniform Sector Dual and Quad Serial Flash GD25Q32C 8 4. DEVICE OPERATION SPI Mode Standard SPI Product Overview FQB19N20L: Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 21 A, 140 mΩ , D2PAK For complete documentation, see the data sheet. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. Fuji Electric offers an extensive lineup of Power Supply Control IC. This page covers the products suitable for AC/DC current and presents their data sheets.

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FQP12N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Buy low price, high quality and original RH5RA38AA transistors with worldwide shipping on originaltransistors.com Catalog Datasheet MFG & Type PDF Document Tags; Not Available. Abstract: No abstract text available Text: QFET N-CHANNEL FQB10N20, FQI10N20 FEATURES BV qss = 200V â ¢ Advanced New Design â , ICONDUCTOR i tm © 1999 Fairchild S e m ico n d u cto r C orporation Units °C/W FQB10N20, SEM ICONDUCTOR tm QFET N-CHANNEL FQB10N20, FQI10N20 Fig 1 ...

FQB19N20L Rev. C1 2 www.fairchildsemi.com FQB19N20L — N-Channel QFET ® MOSFET Part Number Top Mark Package Reel Size Tape Width Quantity FQB19N20LTM FQB19N20L D2-PAK 330 mm 24 mm 800 units Packing Method Tape and Reel Electrical Characteristics TC = 25°C unless otherwise noted. 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. Offer FQB19N20L FSC from Kynix Semiconductor Hong Kong Limited.FETs - Single October 2008 QFET® FQB19N20L / FQI19N20L 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 21A, 200V, RDS(on) = 0.14Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology MC78M05ACD price list from transistormosfet.cn offers you the best MC78M05ACD series,transistor and MC78M05ACD mosfet.

Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors - Page 11727 [email protected]@@@@ pricing list: transistorall.com offers you the best [email protected]@@@@ datasheet,transistor and [email protected]@@@@ mosfet. Fairchild Semiconductor catalog page 167, datasheet, datasheet search, data sheet, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, semiconductors FQA19N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

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1N4742A 12V, 1W Zener Diode . Pow er D issipation D erate above ° C Storage Tem perature R ange O perating Junction Tem perature Therm al resistance Junction to Lead Therm al resistance Junction A m bient Lead Tem perature (1/16 from case for 10 seconds) Surge Pow er**. Fuji Electric offers an extensive lineup of Power Supply Control IC. This page covers the products suitable for AC/DC current and presents their data sheets. FQB19N20L Datasheet, FQB19N20L PDF, FQB19N20L Data sheet, FQB19N20L manual, FQB19N20L pdf, FQB19N20L, datenblatt, Electronics FQB19N20L, alldatasheet, free, datasheet ...

FQ5032B-24.576 TO FQB7N30 datasheet, circuit, data sheet ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated ... FQB27P06 Datasheet (PDF) 1.1. fqb27p06tm.pdf Size:1071K _fairchild_semi October 2008 QFET® FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology

Fairchild Semiconductor catalog page 167, datasheet, datasheet search, data sheet, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, semiconductors 200V N-Channel MOSFET, FQB19N20 datasheet, FQB19N20 circuit, FQB19N20 data sheet : FAIRCHILD, alldatasheet, datasheet, Datasheet search site for Electronic Components ...

Fuji Electric offers an extensive lineup of Power Supply Control IC. This page covers the products suitable for AC/DC current and presents their data sheets.

Fairchild Semiconductor catalog page 167, datasheet, datasheet search, data sheet, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, semiconductors 1N4742A 12V, 1W Zener Diode . Pow er D issipation D erate above ° C Storage Tem perature R ange O perating Junction Tem perature Therm al resistance Junction to Lead Therm al resistance Junction A m bient Lead Tem perature (1/16 from case for 10 seconds) Surge Pow er**. MC78M05ACD price list from transistormosfet.cn offers you the best MC78M05ACD series,transistor and MC78M05ACD mosfet. Catalog Datasheet MFG & Type PDF Document Tags; 2001 - 1N4001-1N4007. Abstract: 1n4001_1N4007 Text: 4007 800 560 800 1000 700 1000 V V V µA µA V µA pF VFM Irr C 2001 Fairchild Semiconductor , unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an , TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT ...

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. FQB27P06 Datasheet (PDF) 1.1. fqb27p06tm.pdf Size:1071K _fairchild_semi October 2008 QFET® FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. [email protected]@@@@ pricing list: transistorall.com offers you the best [email protected]@@@@ datasheet,transistor and [email protected]@@@@ mosfet.